Cross-plane Seebeck coefficient in superlattice structures in the miniband conduction regime
نویسندگان
چکیده
We have studied experimentally and theoretically the cross-plane Seebeck coefficient of short period InGaAs/InAlAs superlattices with doping concentrations ranging from 2x10(18) up to 3x10(19) cm(-3). Measurements are performed with integrated thin film heaters in a wide temperature range of 10-300 K. It was interesting to find out that contrary to the behavior in bulk material the Seebeck coefficient did not decrease monotonically with the doping concentration. We did not observe a sign change in the Seebeck coefficient at dopings where the Fermi energy is just above a miniband. This is a sign that electrons’ lateral momentum is conserved in the transport perpendicular to superlattice layers. A preliminary theory of thermoelectric transport in superlattices in the regime of miniband formation has been developed to fit the experimental results. Cross-plane Seebeck coefficient in superlattice structures in the miniband conduction regime Daryoosh Vashaee,1,* Yan Zhang,1 Ali Shakouri,1 Gehong Zeng,2 and Yi-Jen Chiu2 1Jack Baskin School of Engineering, University of California, Santa Cruz, California 95064, USA 2Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA Received 11 July 2006; revised manuscript received 18 September 2006; published 9 November 2006 We have studied experimentally and theoretically the cross-plane Seebeck coefficient of short period InGaAs/ InAlAs superlattices with doping concentrations ranging from 2 1018 up to 3 1019 cm−3. Measurements are performed with integrated thin film heaters in a wide temperature range of 10–300 K. It was interesting to find out that contrary to the behavior in bulk material the Seebeck coefficient did not decrease monotonically with the doping concentration. We did not observe a sign change in the Seebeck coefficient at dopings where the Fermi energy is just above a miniband. This is a sign that electrons’ lateral momentum is conserved in the transport perpendicular to superlattice layers. A preliminary theory of thermoelectric transport in superlattices in the regime of miniband formation has been developed to fit the experimental results. DOI: 10.1103/PhysRevB.74.195315 PACS number s : 73.50.Lw, 73.63. b
منابع مشابه
Seebeck Enhancement Through Miniband Conduction in III–V Semiconductor Superlattices at Low Temperatures
We present theoretically that the cross-plane Seebeck coefficient of InGaAs/ InGaAlAs III–V semiconductor superlattices can be significantly enhanced through miniband transport at low temperatures. The miniband dispersion curves are calculated by self-consistently solving the Schrödinger equation with the periodic potential, and the Poisson equation taking into account the charge transfer betwe...
متن کاملCross-Plane Seebeck Coefficient Anomaly in a High Barrier Superlattice
We have measured the cross-plane Seebeck coefficient of short period InGaAs/InAlAs superlattices with 5nm wells and 3nm barriers with different doping concentrations. Contrary to the behavior of conventional bulk III-V materials, the Seebeck coefficient did not decrease monotonically with increasing doping concentration. A detailed numerical calculation based on semi-classical Boltzmann transpo...
متن کاملInfluence of Doping Concentration and Ambient Temperature on the Cross-Plane Seebeck Coefficient of InGaAs/InAlAs superlattices
We have developed thin film heaters/sensors that can be integrated on top of superlattice microcoolers to measure the Seebeck coefficient perpendicular to the layer. In this paper, we discuss the Seebeck coefficients of InGaAs/InAlAs superlattices grown with Molecular Beam Epitaxy (MBE) that have different doping concentrations, varying between 2e18, 4e18, and 8e18 to 3e19 cm. It was interestin...
متن کاملCross-plane Seebeck coefficient and Lorenz number in superlattices
Low dimensional and nanostructured materials have shown great potential to achieve much higher thermoelectric figure of merits than their bulk counterparts. Here, we study the thermoelectric properties of superlattices in the cross-plane direction using the Boltzmann transport equation and taking into account multiple minibands. Poisson equation is solved self-consistently to include the effect...
متن کاملThermoelectric Transport in a ZrN/ScN Superlattice
Metal/semiconductor superlattices have the potential for a high thermoelectric figure of merit. The thermopower of these structures can be enhanced by controlling the barrier height using high-energy electron filtering. In addition, phonon scattering at interfaces can reduce the lattice contribution to the thermal conductivity. In this paper, we present theoretical and experimental studies of t...
متن کامل